CEG2108E
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
20V, 8.
5A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 15mΩ @VGS = 4.
5V.
RDS(ON) = 20mΩ @VGS = 2.
5V.
RDS(ON) = 28mΩ @VGS = 1.
8V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TSSOP-8 for Surface Mount Package.
G2 S2
S2
D
TSSOP-8
G1 S1 S1 D
D
*1K G1
*1K G2
S1 *Typical value by design
D1 S1 2 S1 3 G1 4
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 8.
5 IDM 34
Maximu...