CEG6946A
Dual N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 3.
7A, RDS(ON) = 45mΩ @VGS = 4.
5V.
RDS(ON) = 75mΩ @VGS = 2.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
D1 1 S1 2 S1 3 G1 4
8 D2 7 S2 6 S2 5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 3.
7 IDM 15
Maximum Power Dissipation
PD 1.
0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Charact...