CEU4259
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
40V , 14A , RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.
5V.
-40V , -12A , RDS(ON) = 43mΩ @VGS = 10V.
RDS(ON) = 65mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead free product is acquired.
TO-252-5L package.
S1 G1
D1/D2 S2 G2
D1/D2
CEU SERIES TO-252-5L
D1/D2
G2 S1
S2
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 40 40
VGS ±20 ±20
ID...