CED65P03/CEU65P03
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -65A, RDS(ON) = 9mΩ @VGS = -10V.
RDS(ON) = 12mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
-30
±20
-65 -260 62.
5 0.
5
Operating and Store Temperature Range
TJ,Tstg...