CED3080/CEU3080
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 57A, RDS(ON) = 10mΩ @VGS = 10V.
RDS(ON) = 14mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
57 200 52 0.
42
Operating and Store Temperature Range
TJ...