CEP14P20/CEB14P20
CEF14P20
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP14P20 CEB14P20 CEF14P20
VDSS -200V -200V
-200V
RDS(ON) 0.
36Ω 0.
36Ω
0.
36Ω
ID -13.
5A -13.
5A -13.
5A d
@VGS -10V -10V
-10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise no...