CET01N65A
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
650V, 0.
3A, RDS(ON) = 15Ω @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-223 package.
D
DS D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 650
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 0.
3 IDM 1.
2
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 42
Units V V A A W C
Units C...