CET3301
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -7.
3A, RDS(ON) = 35mΩ @VGS = -10V.
RDS(ON) = 53mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
SOT-223 package.
D
DS D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -7.
3 IDM -29
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol R...