Part Number
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HMC8205BF10 |
Manufacturer
|
Analog Devices |
Description
|
Power Amplifier |
Published
|
Jun 19, 2018 |
Detailed Description
|
Data Sheet
FEATURES
High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Sup...
|
Datasheet
|
HMC8205BF10
|
Overview
Data Sheet
FEATURES
High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.
3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package
APPLICATIONS
Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment
GENERAL DESCRIPTION
The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.
5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.
3 GHz to 6 GHz.
No external matching is required to achieve full band operation.
Additionally, no external inductor is required to bias the amplifier.
Also, dc blocking capacitors for the RF...
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