MMD65R380Q Datasheet MMD65R380Q 650V 0.
38Ω N-channel MOSFET  Description MMD65R380Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
 Key Parameters Parameter VDS @ Tj, max RDS(on),max VGS(th), typ ID Qg, typ Value 700 0.
38 3 10.
6 20.
6 Unit V Ω V A nC  Package & Internal Circuit D D G S G S  Features  Low power loss by high speed switching and low on-resistance  100% avalanche tested  Green package – Pb-free plating,...

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