Part Number
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VSD013N10MS |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Jun 19, 2018 |
Detailed Description
|
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche t...
|
Datasheet
|
VSD013N10MS
|
Overview
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.
5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
V DS
100 V
R @DS(on),TYP VGS=10 V
11 mΩ
R @DS(on),TYP VGS=4.
5 V
12 mΩ
I D 52 A
TO-252
Part ID VSD013N10MS
Package Type TO-252
Marking 013N10M
Tape and reel information
3000PCS/Reel
Maximum ratings, at T j=25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TA =10...
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