BC307/308/309
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage : BC307 : BC308/309
VCEO
Collector-Emitter Voltage : BC307 : BC308/309
VEBO IC PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature
1 TO-92 1.
Collector 2.
Base 3.
Emitter
Value
-50 -30
-45 -25 -5 -100 500 150 -55 ~ 150
Units
V V
V V V mA mW °C °C
©2002 Fairchild Semiconductor Corporation
Rev.
A2, August 2002
BC307/308/309
Electrical Characteristics Ta=25°C unless otherwise noted
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