Part Number
|
VSI018N03MS |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Jun 20, 2018 |
Detailed Description
|
Features
N-Channel Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested...
|
Datasheet
|
VSI018N03MS
|
Overview
Features
N-Channel Enhancement mode Low on-resistance RDS(on) @ VGS=4.
5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSI018N03MS
30V/30A N-Channel Advanced Power MOSFET
V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.
5 V ID
30 V 16 mΩ 22 mΩ 30 A
TO-251-S
Part ID VSI018N03MS
Package Type TO-251-S
Marking 018N03M
Tape and reel information
80pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
ID Continuous drain current@VGS=10V
IDM EAS PD VGS
Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage
TC =25°C TC =10...
Similar Datasheet