Part Number
|
VSB022N04MS |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Jun 20, 2018 |
Detailed Description
|
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche T...
|
Datasheet
|
VSB022N04MS
|
Overview
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.
5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSB022N04MS
40V/20A N-Channel Advanced Power MOSFET
V DS
40 V
R @DS(on),TYP VGS=10 V
18 mΩ
R @DS(on),TYP VGS=4.
5V
21 mΩ
I D 20 A
TDFN3.
3x3.
3
Part ID VSB022N04MS
Package Type TDFN3.
3x3.
3
Marking 022N04M
Tape and reel information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum pow...
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