Part Number
|
VSI080N06MS |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Jun 20, 2018 |
Detailed Description
|
Features
N-Channel Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching Pb-free lead plating; Ro...
|
Datasheet
|
VSI080N06MS
|
Overview
Features
N-Channel Enhancement mode Very low on-resistance @ VGS=4.
5 V Fast Switching Pb-free lead plating; RoHS compliant
VSI080N06MS
60V/15A N-Channel Advanced Power MOSFET
V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.
5V ID
60 V 68 mΩ 85 mΩ 15 A
TO-251-S
Part ID VSI080N06MS
Package Type TO-251-S
Marking 080N06
Tape and reel information
80pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
ID
IDM PD IS EAS TJ TSTG
Continuous drain current@VGS=10V
Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ② Maxim...
Similar Datasheet