VS6808AH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET Features Ron(typ.
)=15 mΩ @VGS=4.
5V Low On-Resistance Fast Switching ESD Protection Green Product Description VS6808AH designed by the trench processing techniques to achieve extremely low on-resistance,fast switching speed and improved transfer effective .
These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward C...

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