CS2609
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
Features
● VDS = 20V,ID =2.
5A RDS(ON) 70mΩ @ VGS =4.
5V RDS(ON) 130mΩ @ VGS =2.
5V
● VDS = -20V,ID =-2.
5A RDS(ON) 160mΩ @ VGS =-4.
5V RDS(ON) 240mΩ @ VGS =-2.
5V
● Super high dense cell design for extremely low RDS(ON) ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic Diagram
Application
● Battery protection ● Load switch ● Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
2609
CS2609
TSOP-6
Reel Size --
Tape width --
Quantity --
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source V...