BC490
High Current
Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value −80 −80 −4.
0 −1.
0 625 5.
0
Unit Vdc Vdc Vdc Adc mW mW/°C
Total Device Dissipation @ TC = 25°C PD 1.
5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
3 °C/W
Stresses exceedin...