N-Channel Trench Power MOSFET General Description The D444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
Those devices are suitable for use in PWM, load switching and general purpose applications.
Features ● VDS=60V; ID=15A RDS(ON)40mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching D444 To-252 Top View Schematic Diagram VDS =60V ID = 15A RDS(ON)= 32mΩ Package Marking and Ordering Information Device Marking Device Device Package D444 D444 TO-252 Reel Size - Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage...

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