1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.
3 THRU 33 VOLT ±5% TOLERANCE w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.
1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX VVV Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.
135 3.
3 3.
465 20 2...

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