Dual N-Channel MOSFET Common Drain, ESD Protection DTM8021 www.
din-tek.
jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
017 at VGS = 4.
5 V 20 0.
020 at VGS = 2.
5 V ID (A) 6.
5 5.
5 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • ESD Protected: 3000 V Pb-free Available RoHS* COMPLIANT D1 1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8 D2 7 S2 6 S2 5 G2 D1 D2 G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.
5 5.
2 5.
5 3.
5 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Cond...

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