N-Channel 0-V (D-S) MOSFET '781 ZZZGLQWHNMS PRODUCT SUMMARY VDS (V)  RDS(on) (:) 0.
00 at VGS = 10 V 0.
00 at VGS = 4.
5 V TO-252 ID (A)a, e   Qg (Typ)  nC D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Con...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)