3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode
transistors designed for chopper and switching application.
CASE 20 (T0-72)
O2 o
STYLE Z PIN 1.
SOURCE Z.
GATE
1 000 3
3.
DRAIN
4.
SUBSTRATE AND
CASE LEAD
MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VDS VDG VGS 1D PD
TJ Tstg
Value
35 35 50 30 300 1.
7 -65 to +175 -65 to +200
Unit
Vdc Vdc Vdc mAdc mW mW;oC °c °c
HANDLING PRECAUTIONS:
MOS field-effect
transistors have extremely high input resistance.
They can b...