53462N (SILICON)
thru
2N5349
MEDIUM-POWER
NPN SILICON
TRANSISTORS
· .
.
designed for switching and wide-band amplifier applications.
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.
2 Vdc (Max) @ IC = 7.
0 Adc
• DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base CUrrent
Total Device Dissipation@ TC = 25'C Derate above 25°C
Operating and storage Junction Temperature Range
Symbol
VCEO VCB VEB IC IB PD
TJ• Tstg
2NS346 2NS347
80
2NS348 2NS349
100
...