2N5641 (SILICON) 2N5642 2N5643
NPN SILICON RF POWER
TRANSISTORS
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designed for VH F power amplifier or oscillator applications in military and industrial equipment.
These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz.
• Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists
transistor damage caused by load mismatch.
• Stripline packaging for lower lead inductance and better broad· band capability.
• Ceramic Packaging
• Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.
0 Watts Output Power at B.
4 dB Gain 2N5642 - 20 Watts Output Power at 8.
2 dB Gain 2N5643 - 40 Watts Output Powe...