2N5155

2N5150 : 2N5150 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. 70 Ty.

2N5151 : The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The complementary NPN types are the 2N5152 and 2N5154 respectively 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IC(PK) IB Ptot Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current .

2N5151 : www.DataSheet4U.com TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/.

2N5151 : 2N5151, 2N5151L, 2N5153, 2N5153L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545  TO-5 Package: 2N5151L, 2N5153L  TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .

2N5151 : 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA d.

2N5151 : .

2N5151L : www.DataSheet4U.com TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/.

2N5151L : 2N5151, 2N5151L, 2N5153, 2N5153L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545  TO-5 Package: 2N5151L, 2N5153L  TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .

2N5151L : 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA d.

2N5151U3 : 2N5151U3 & 2N5153U3 PNP Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/545 • Lightweight & Low Power • Ideal for Space, Military, and Other High Reliability Applications • Surface Mount U3 Package Rev. V5 Electrical Characteristics (TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Voltage (Non-Saturated) Base - Emitter Saturation Voltage IC = -100 mA dc; IB = 0 VEB = -4.0 .

2N5152 : 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 2 .5 4 (0 .1 0 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 4 5 ° The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use in switching applications. The complementary PNP types are the 2N5151 and 2N5153 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) 2N5152 100V 80V 6V 5A 10A 1A 1W 10W 6.7W 2N5154 VCBO VCEO VEBO IC IC(PK) IB Ptot Collector – Base Voltage (IE = 0) Co.

2N5152 : Data Sheet No. 2N5152 Type 2N5152 Geometry 9201 Polarity NPN Qual Level: JAN - JANS Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases. Generic Part Number: 2N5152 REF: MIL-PRF-19500/544 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW 8.3 ms, 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C Operati.

2N5152 : NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices 2N5152 2N5152L 2N5154 2N5154L TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) VCEO VCBO VEBO IC(3, 4) PT Operating & Storage Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/0C for TC +250C 3) Derate linearly 80 mW/0C for TC +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% RθJC All Units .

2N5152 : 2N5152, 2N5152L, 2N5154, 2N5154L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/544  TO-5 Package: 2N5152L, 2N5154L  TO-39 (TO-205AD) Package: 2N5152, 2N5154 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .

2N5152L : Data Sheet No. 2N5152L Type 2N5152L Geometry 9201 Polarity NPN Qual Level: JAN - JANS Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases. Generic Part Number: 2N5152L REF: MIL-PRF-19500/544 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW 8.3 ms, 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C Operat.

2N5152L : NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices 2N5152 2N5152L 2N5154 2N5154L TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) VCEO VCBO VEBO IC(3, 4) PT Operating & Storage Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/0C for TC +250C 3) Derate linearly 80 mW/0C for TC +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% RθJC All Units .

2N5152L : 2N5152, 2N5152L, 2N5154, 2N5154L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/544  TO-5 Package: 2N5152L, 2N5154L  TO-39 (TO-205AD) Package: 2N5152, 2N5154 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .