52242N (SILICON)
NPN SILICON ANNULAR
TRANSISTOR
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designed for general'purpose, low·level switching applications.
• Current Gain Specified at 10 mAdc and 100 mAdc • Complete Switching Specification • Low Collector· Base Capacitance -
Ccb = 4.
0 pF (Max) @ VCB = 5.
0 Vdc
NPN SILICON SWITCHING
TRANSISTOR
*MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ T A "" 25°C Derate above 2SoC
Total Power Dissipation @ TC "" 25°C Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
IC
Po
Po
TJ,T"g
Value
12 25 5.
0 200
350 2.
8 1.
0 8.
0 -55 to +150
Unit Vdc Vdc Vdc mAde...