2N5265
thru (SILICON)
2N5270
P-Channel junction depletion mode (Type A) fieldeffect
transistors designed for general-purpose amplifier applications.
CASE 20(5)
(TO·72)
O2 o
STYLE 5 PIN 1.
SOURCE
10 0 3
2.
GATE 1
o 3.
DRAIN
4 4.
CASE
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage Reverse Gate-Source Voltage
Drain Current Gate Current -forward
Total Device Dissipation @ TA = 25°C Derate above 25°C
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS VDG VGS(r) ID IG(f) PD
Tstg TJ
Value
60 60 60 20 10 300 2.
0 -65 to +200
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW mWrC
°c °c
2·112
2N5265 thru 2N5270 (continued)
ELECTRICAL CHARACTERISTICS (T.
= 2...