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2N5058S

NPN SILICON ANNULAR TRANSISTORS

Description

2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS · .. designed for high·voltage amplifier and driver applications. • High Collector· Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S • DC Current Gain Specified 5.0 mAdc to 100 mAdc • Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTOR...

ETC

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