SILICON
NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
TV VERTICAL OUTPUT APPLICATIONS.
FEATURES .
Good Linearity of hEE .
Complementary to S1237
Unit in mm
10.
3MAX.
03.
6±O.
2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature
SYMBOL vCBO VcEO v EBO ic IE IB
pC
T
J
T stg
RATING 90 90
5 4
-4
3
40
150
-55-150
UNIT V V V A A A
W
°C °C
a
2.
54
r
Ai
2.
54
N
Si
J"°Jr-i
-
to ci
X
E-
4
{
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
JEDEC TOSHIBA
TO— 220AB SC—4 6
g— 10A1A
Mounting Kit...