v
:
SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES .
Suitable for TV Sound Output, Vert.
Deflection
Output.
.
Designed for Complementary Use with S1955.
Unit in mm
^9.
9 MAX.
03.
2±O.
2
1'
Jr.
i ,
=U
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO ic IE ?C
T.
i
T stg
RATING
60 50
5
1.
5 -1.
5
1.
5 150
-55-150
UNIT
V V V A A W °C °c
T—
3°
1.
EMITTER Z.
BASE 3.
COLLECTOR fHEAT SINK)
JEDEC EIAJ TOSHIBA
Weight
TO-202 1.
4g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERI...