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2N4398

Part Number 2N4398
Manufacturer Toshiba
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Published Jul 16, 2018
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICA...
Datasheet 2N4398





Overview
: SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES .
Specification for hpE and VcE(sat) UP to 30A: hpE=5.
0 (Min.
) @ VCE=-4.
0V, I C=-30A VCE(sat)=-4.
0V (Max.
) @ Ic=-30A, I B=-6A .
Low Saturation Voltage: vCE(sat)=-0.
75V (Max.
) @ I C=-10A, I B=-1.
0A vBE(sat)="l-6V (Max.
) @ I C=-10A, I B=-1.
0A .
High Collector Power Dissipation Capability: P C=200W (Max.
) .
Complementary to 2N5301 MAXIMUM RATINGS (Ta=25°C) 1.
BASE 2.
EMITTER COLLECTOR (CASE) TOSHIBA TO—2 4MA/T0— TC—3, TB— 2-21D1A Weight : 12.
6g CHARACTERISTIC SYMBOL - RATING Collector-Base Voltage Collector-Emitter Sustaining Voltage Emit...






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