BD136 BD138
IBD140I
SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES .
Designed for Complementary Use with BD135, BD137
and BD139
7.
9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BD136 BD138 BD140
VCBO
Collector-Emitter Voltage
BD136 BD138 BD140
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25°C Tc^60°C
VcEO
VEBO
ic ICM
Junction Temperature
Storage Temperature Range
L stg
RATING -45 -60 -80 -45 -60 -80 -5
-0.
5 -1.
5
6.
5 150
-55-150
UNIT
1.
EMITTER 2.
COLLECTOR (HEAT SINK) Z.
BASE
TO— 126 TOSHIBA Weight : 0.
72g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERIST...