SILICON
NPN EPITAXIAL PLANAR TYPE
2SC2379
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P =6W(Min.
)
(f=470MHz, VCC=12.
6V, Pi=lW) .
100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C C=12.
5V, P =6.
5W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO VeBO ic
Ti L stg
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage Emitter-Base B...