SILICON
NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P Q =3W(Min.
)
(f=470MHz, V CC=12.
6V, Pi=0.
4W) .
100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=15V, P±* : 0.
4W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VcBO
35
Collector-Emitter Voltage
VcEO
17
Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25°C)
VEBO ic PC
3.
5 0.
8 7.
5
1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR
Junction Temperature
175
Storage Temperature Range
L stg
ELECTRICAL CHARACTERISTICS (Ta =25 °c)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Co...