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SILICON
NPN EPITAXIAL PLANAR TYPE
)
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS.
(28V SUPPLY VOLTAGE USE)
FEATURES
.
Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Minimum Gain : Gp e =16dB : Efficiency : 7c = 40%(Min.
: Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
012.
7 ±Q5
ci cS +1 -H
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO v CEO v EBO ic
?C
T
J
T stg
RATING 65 35
4
7
80
UNIT V V V A W
175
-65-175
°C °c
\' ' ;
;
: !
l
18.
4±ai5
1f
1.
EMITTER 2.
BASE ...