_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No.
594
DDLn3LJD
Solid State Division
Power
Transistors
RCA1000 RCA1001
a-Ampere Silicon N-P-N Darlington Power
Transistors
For Use as Output Devices in General-Purpose Switching and Amplifier Applications
JEOEC TO·3
Features:
• High de current gain: hFE = 1000 min_ at IC = 3 A
• Monolithic construction with built-in bas8e smitter shunt resistors
RCA-l000 and 1001 are monolithic silicon n-p-n Darlington
transistors intended for medium-power applications as output devices.
The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for ...