_______________________________ FileNo.
211
OOCBLJD
Solid State Division
Power
Transistors
40346 40346V1 40346V2 40412 40412V1 40412V2
,~.
.
.
.
*
! .
•
40346V2 40412V2
H~1375
~_.
1'~ .
.
,~
-'40346Vl 40412Vl H-1468
wr
40346S 40412S
II \
40346L
40412L
II
\
\
H·1380
Medium-Power Silicon N-P-N Planar
Transistors
For High·Voltage Switching and Linear·Amplifier Applications
Features:
• For operation at junction lomperature up to 2000 C
• Planar construction for low noise and low leakage
These devices are available with either 1%· inch leads fTO-5 package) or %-inch leads (TO·39 package).
The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions...