MSS30-xxx-x Series
Low Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS30-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev.
V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-C15 Single Junction
VF Typ.
V
0.
29
MSS30-050-C15 Single Junction 0.
27
Test Conditions
IF = 1 mA
VBR Min.
V
2
CJ Typ.
/ Max.
pF
0.
10 / 0.
12
2 0.
15 / 0...