MSS39-xxx-x Series
P-Type Silicon
Schottky Diodes
Features
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of
Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Rev.
V1
Chip
Electrical Specifications: TA = 25°C
Model
VBR Min.
V
VF Typ.
V
MSS39-045-C15
5
0.
40
CJ Max.
pF
0.
10
TSS Ttp.
dBm
-58
ϓ Typ.
mV / mW
5,000
Frequency Max.
GHz
18
MSS39-048-C15
5
0.
39 0.
15
-58
5,000
12
Test Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz
Outli...