MSS40-xxx-x Series
Medium Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS40-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.
Rev.
V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS40-045-C15 Single Junction
VF Typ.
V
0.
42
MSS40-048-C15 Single Junction 0.
40
Test Conditions
IF = 1 mA
VBR Min.
V
3
CJ Typ.
/ Max.
pF
0.
09 / 0.
12
3 0.
12 /...