MSS50-xxx-x Series
High Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS50-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Rev.
V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS50-048-C15 Single Junction
0.
5
VBR Min.
V
4
CJ Typ.
/ Max.
pF
0.
12 / 0.
15
MSS50-062-C16 Test Conditions
Single Junction
0.
5 IF = 1 mA
5 0.
50 / 0...