MSS60-xxx-x Series
Extra High Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS60-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Rev.
V1
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS60-144-B10B
Single Junction
625
MSS60-148-B10B
Single Junction
625
MSS60-153-B10B
Single Junction
625
MSS60-244-B20
Series Tee
6...