MGR70x Series
Silicon
Schottky Diodes
Features
Fast Switching High Breakdown Voltage
Description
The MGR-700 Series are general purpose
Schottky barrier diodes specially designed to achieve a high voltage breakdown.
This series of diodes can be used in the UHF and VHF frequency bands for pulse shaping, sampling and as fast logic gates.
Electrical Specifications: TA = 25°C
Voltage Breakdown (VB)
Forward Voltage (VF)
Model
IR 10 µA V
Min.
1 mA V
Typ.
MGR700
8
0.
34
MGR701
8
0.
34
MGR702
20
0.
55
MGR703
20
0.
41
MGR704
70
0.
41
MGR705
70
0.
41
Rev.
V1
Bare Die
Junction Capacitance (CJ)
@ 0 Vdc, 1 MHz pF
Max.
1.
2 1.
0 1.
2 1.
0 2.
0 1.
2
Leakage Current (IR)
80% VB nA Max.
1...