Part Number
|
ITCH22210B2E |
Manufacturer
|
Innogration |
Description
|
High Power RF LDMOS FET |
Published
|
Aug 5, 2018 |
Detailed Description
|
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22210B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 210W, 28V High...
|
Datasheet
|
ITCH22210B2E
|
Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH22210B2 Preliminary Datasheet V1.
0
2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs
Description
The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22210B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency
Gp
P-1dB
P-3dB
D@P-3
(MHz)
(dB)
(dBm)
(dBm)
(%)
2110
16.
9
53.
1
54.
0
54.
5
2140
...
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