MSAT-N25 NIP Diode Attenuator Shunt Element (2012) Plastic Molded DFN Description A broadband, High Linearity medium power shunt NIP Attenuator element 1.
9 X 1.
1 mm DFN package.
This device is designed for wireless Telecommunication infrastructure and test instrument applications.
It is also suited for other applications in 0.
1 ~ 10 GHz range.
Features • Low Distortion Harmonics at 85 dBc Typical • Broadband performance, beyond 10 GHz • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST CONDITIONS VBR Lt Rs min IR = 10 mA IF = 10 mA I = -100 mA IR = 6 mA 10% / 90% F = 500 MHz Rs High I = -10 mA F = 500 MHz Rs Low I = 1 mA F =...

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