20V N-Channel MOSFETs
PDEJ2210Z
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
2928-J Dual Pin Configuration
D1 D1 D2 D2
D1 D2 G1 G2
G2 S2 S1 G1
S1 S2
BVDSS 20V
RDSON 15m
ID 7.
6A
Features
20V, 7.
5A, RDS(ON)=15mΩ@VGS=4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.
8V Gate Drive Applications G-S ES...