20V P-Channel MOSFETs
PDB2309L
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2x2-6L 2EP Pin Configuration
DD G
DD S
S SDD
D
GD D
G
D
S
BVDSS -20V
RDSON 28m
ID -8.
5A
Features
-20V,-8.
5A, RDS(ON) =28mΩ@VGS = -4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.
8V Gate Drive Applications
Applicat...