30V P-Channel MOSFETs
PDB3909L
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2x2-6L 2EP Pin Configuration
D
D DS
S
S DD DG
DD G
GDD
S
BVDSS -30V
RDSON 30m
ID -6.
1A
Features -30V,-6.
1A, RDS(ON) =30mΩ@VGS = -10V
Fast switching Green Device Available
Suit for -4.
5V Gate Drive Applications
Applications
Notebook Load Switch ...