100V Dual N-Channel MOSFETs
PDB0854S
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
BVDSS 100V
RDSON 390m
ID 1.
2A
Features
100V,1.
2A, RDS(ON) =390mΩ @VGS = 10V Improved dv/dt capability Fast switching Green Device Available
DFN2X2 Dual 2EP Pin Configuration
D1 G2
˙ S2
S1 G1 D2
D1 G1 G2
S1
Applications D2 Networking
Load Switch ...